FDD5N50NZ Series

Power MOSFET, N-Channel, UniFETTM II, 500 V, 4 A, 1.5 Ω, DPAK

Catalog

Power MOSFET, N-Channel, UniFETTM II, 500 V, 4 A, 1.5 Ω, DPAK

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Technology	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)
ON Semiconductor FDD5N50NZTM	TO-252AA	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	500 V	-55 °C	150 °C	440 pF	62 W	MOSFET (Metal Oxide)	25 V	N-Channel	1.5 Ohm	Surface Mount	12 nC	4 A	5 V
ON Semiconductor FDD5N50TM-WS	TO-252AA	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	500 V	-55 °C	150 °C			MOSFET (Metal Oxide)	30 V	N-Channel	1.4 Ohm	Surface Mount		4 A	5 V	40 W

Catalog

Power MOSFET, N-Channel, UniFETTM II, 500 V, 4 A, 1.5 Ω, DPAK

Key Features

• RDS(on)= 1.38Ω ( Typ.)@ VGS= 10V, ID= 2A

• Low gate charge ( Typ. 9nC)

• Low Crss( Typ. 4pF)

• 100% avalanche tested

• Improved dv/dt capability

• ESD improved capability

• RoHS compliant

Description

UniFETTMII MOSFET is a high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.