FDD5N50NZTM
ActivePOWER MOSFET, N-CHANNEL, UNIFET<SUP>TM</SUP> II, 500 V, 4 A, 1.5 Ω, DPAK
Deep-Dive with AI
Search across all available documentation for this part.
FDD5N50NZTM
ActivePOWER MOSFET, N-CHANNEL, UNIFET<SUP>TM</SUP> II, 500 V, 4 A, 1.5 Ω, DPAK
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDD5N50NZTM |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 12 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) [Max] | 62 W |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm |
| Supplier Device Package | TO-252AA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.52 | |
| 10 | $ 0.96 | |||
| 100 | $ 0.64 | |||
| 500 | $ 0.50 | |||
| 1000 | $ 0.46 | |||
| Digi-Reel® | 1 | $ 1.52 | ||
| 10 | $ 0.96 | |||
| 100 | $ 0.64 | |||
| 500 | $ 0.50 | |||
| 1000 | $ 0.46 | |||
| Tape & Reel (TR) | 2500 | $ 0.41 | ||
| 5000 | $ 0.38 | |||
| 7500 | $ 0.37 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 1.76 | |
| 10 | $ 1.20 | |||
| 25 | $ 1.09 | |||
| 50 | $ 0.98 | |||
| 100 | $ 0.87 | |||
| 250 | $ 0.81 | |||
| ON Semiconductor | N/A | 1 | $ 0.34 | |
Description
General part information
FDD5N50NZ Series
UniFETTMII MOSFET is a high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Documents
Technical documentation and resources
