Isolators

BM6GD11BFJ-LBE2

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ISOLATION VOLTAGE 2500VRMS 1CH GATE DRIVER PROVIDING GALVANIC ISOLATION FOR GAN HEMT

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DocumentsFive Steps for Successful Thermal Design of IC Heat Dissipation Effect of Thermal Via in Exposed Pad Type Package +19

Isolators

BM6GD11BFJ-LBE2

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Rohm Semiconductor

ISOLATION VOLTAGE 2500VRMS 1CH GATE DRIVER PROVIDING GALVANIC ISOLATION FOR GAN HEMT

Deep-Dive with AI

DocumentsFive Steps for Successful Thermal Design of IC Heat Dissipation Effect of Thermal Via in Exposed Pad Type Package +19

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BM6GD11BFJ-LBE2

Common Mode Transient Immunity (Min) [Min]	150 kV/µs
Current - Output High, Low [custom]	2 A
Current - Output High, Low [custom]	2 A
Mounting Type	Surface Mount
Number of Channels [custom]	1
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Propagation Delay tpLH / tpHL (Max) [custom]	60 ns
Propagation Delay tpLH / tpHL (Max) [custom]	60 ns
Pulse Width Distortion (Max)	65 ns
Rise / Fall Time (Typ)	8 ns
Supplier Device Package	8-SOP-J
Technology	Magnetic Coupling
Voltage - Isolation	2500 Vrms
Voltage - Output Supply [Max]	6 V
Voltage - Output Supply [Min]	4.5 V

BM6GD11BFJ-LB Series

Isolation Voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation for GaN HEMT

Part	Common Mode Transient Immunity (Min) [Min]	Voltage - Isolation	Operating Temperature [Max]	Operating Temperature [Min]	Rise / Fall Time (Typ)	Package / Case	Package / Case	Package / Case	Technology	Voltage - Output Supply [Min]	Voltage - Output Supply [Max]	Pulse Width Distortion (Max)	Propagation Delay tpLH / tpHL (Max) [custom]	Propagation Delay tpLH / tpHL (Max) [custom]	Number of Channels [custom]	Mounting Type	Supplier Device Package	Current - Output High, Low [custom]	Current - Output High, Low [custom]
Rohm Semiconductor BM6GD11BFJ-LBE2	150 kV/µs	2500 Vrms	125 °C	-40 C	8 ns	0.154 in	8-SOIC	3.9 mm	Magnetic Coupling	4.5 V	6 V	65 ns	60 ns	60 ns	1	Surface Mount	8-SOP-J	2 A	2 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2416	$ 2.67

Description

General part information

BM6GD11BFJ-LB Series

This product is a rank product for the industrial equipment market. This is the best product for use in these applications. BM6GD11BFJ-LB is a 1-channel gate driver with built-in isolation, capable of driving GaN HEMTs at high speeds. It has an isolation voltage of2500 Vrms, a maximum input/output delay time of 60ns, and a minimum input pulse width of 65ns. The output driver pins on the source and sink sides are separated. These pins generate a switching waveform with slew rate at the rising and falling edges individually adjusted by inserting a resistor between the gate pins of the GaN HEMT. In addition, an under-voltage lockout function (UVLO) is built into the input side (between VCC1 and GND1) and the output side (between VCC2 and GND2), respectively.