BM6GD11BFJ-LB Series

Isolation Voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation for GaN HEMT

Catalog

Isolation Voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation for GaN HEMT

Part	Common Mode Transient Immunity (Min) [Min]	Voltage - Isolation	Operating Temperature [Max]	Operating Temperature [Min]	Rise / Fall Time (Typ)	Package / Case	Package / Case	Package / Case	Technology	Voltage - Output Supply [Min]	Voltage - Output Supply [Max]	Pulse Width Distortion (Max)	Propagation Delay tpLH / tpHL (Max) [custom]	Propagation Delay tpLH / tpHL (Max) [custom]	Number of Channels [custom]	Mounting Type	Supplier Device Package	Current - Output High, Low [custom]	Current - Output High, Low [custom]
Rohm Semiconductor BM6GD11BFJ-LBE2	150 kV/µs	2500 Vrms	125 °C	-40 C	8 ns	0.154 in	8-SOIC	3.9 mm	Magnetic Coupling	4.5 V	6 V	65 ns	60 ns	60 ns	1	Surface Mount	8-SOP-J	2 A	2 A

Catalog

Isolation Voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation for GaN HEMT

Description

This product is a rank product for the industrial equipment market. This is the best product for use in these applications. BM6GD11BFJ-LB is a 1-channel gate driver with built-in isolation, capable of driving GaN HEMTs at high speeds. It has an isolation voltage of2500 Vrms, a maximum input/output delay time of 60ns, and a minimum input pulse width of 65ns. The output driver pins on the source and sink sides are separated. These pins generate a switching waveform with slew rate at the rising and falling edges individually adjusted by inserting a resistor between the gate pins of the GaN HEMT. In addition, an under-voltage lockout function (UVLO) is built into the input side (between VCC1 and GND1) and the output side (between VCC2 and GND2), respectively.