16:[["$","meta","0",{"name":"viewport","content":"width=device-width, initial-scale=1"}],["$","meta","1",{"charSet":"utf-8"}],["$","title","2",{"children":"θ_JA and Ψ_JT | BM6GD11BFJ-LBE2 - Rohm Semiconductor | Zenode.ai"}],["$","meta","3",{"name":"description","content":"Browse datasheets and documents for BM6GD11BFJ-LBE2 - Rohm Semiconductor. Key specs: Common Mode Transient Immunity (Min) 150 kV/µs kV/µs, Voltage - Isolation 2500 Vrms Vrms, Operating Temperature 125 °C °C, Operating Temperature -40 C C, Rise / Fall Time (Typ) 8 ns ns, Package / Case 0.154 in in. S"}],["$","meta","4",{"name":"keywords","content":"BM6GD11BFJ-LBE2, Rohm Semiconductor, Series BM6GD11BFJ-LB, Isolators - Gate Drivers, Isolators, Common Mode Transient Immunity (Min), Voltage - Isolation, Operating Temperature, Operating Temperature, Rise / Fall Time (Typ), Package / Case, Package / Case, Package / Case, Technology, Voltage - Output Supply, Voltage - Output Supply, Pulse Width Distortion (Max), datasheet, specifications, pricing, electronic components"}],["$","meta","5",{"name":"robots","content":"index, follow"}],["$","meta","6",{"name":"googlebot","content":"index, follow, max-image-preview:large, max-snippet:-1"}],["$","meta","7",{"name":"product:mpn","content":"BM6GD11BFJ-LBE2"}],["$","meta","8",{"name":"product:brand","content":"Rohm Semiconductor"}],["$","meta","9",{"name":"product:category","content":"Isolators - Gate Drivers, Isolators"}],["$","meta","10",{"name":"application/ld+json","content":"$1b"}],["$","meta","11",{"name":"product:series","content":"BM6GD11BFJ-LB"}],["$","meta","12",{"property":"og:title","content":"θ_JA and Ψ_JT | BM6GD11BFJ-LBE2 - Rohm Semiconductor | Zenode.ai"}],["$","meta","13",{"property":"og:description","content":"Browse datasheets and documents for BM6GD11BFJ-LBE2 - Rohm Semiconductor. Key specs: Common Mode Transient Immunity (Min) 150 kV/µs kV/µs, Voltage - Isolation 2500 Vrms Vrms, Operating Temperature 125 °C °C, Operating Temperature -40 C C, Rise / Fall Time (Typ) 8 ns ns, Package / Case 0.154 in in. S"}],["$","meta","14",{"property":"og:site_name","content":"Zenode.ai"}],["$","meta","15",{"property":"og:locale","content":"en_US"}],["$","meta","16",{"property":"og:image","content":"https://cdn.zenode.ai/blobs/documents/4a32572be26a72cd46241c47e29bce85c070a3e8a8407b04670f729dc2576fec.jpeg"}],["$","meta","17",{"property":"og:image:width","content":"1200"}],["$","meta","18",{"property":"og:image:height","content":"630"}],["$","meta","19",{"property":"og:image:alt","content":"BM6GD11BFJ-LBE2 - Rohm Semiconductor"}],["$","meta","20",{"property":"og:image:type","content":"image/jpeg"}],["$","meta","21",{"property":"og:type","content":"website"}],["$","meta","22",{"name":"twitter:card","content":"summary_large_image"}],["$","meta","23",{"name":"twitter:site","content":"@zenode"}],["$","meta","24",{"name":"twitter:creator","content":"@zenode"}],["$","meta","25",{"name":"twitter:title","content":"θ_JA and Ψ_JT | BM6GD11BFJ-LBE2 - Rohm Semiconductor"}],["$","meta","26",{"name":"twitter:description","content":"Browse datasheets and documents for BM6GD11BFJ-LBE2 - Rohm Semiconductor. Key specs: Common Mode Transient Immunity (Min) 150 kV/µs kV/µs, Voltage - Isolation 2500 Vrms Vrms, Operating Temperature 125 °C °C, Operating Temperature -40 C C, Rise / Fall Time (Typ) 8 ns ns, Package / Case 0.154 in in. S"}],["$","meta","27",{"name":"twitter:image","content":"https://cdn.zenode.ai/blobs/documents/4a32572be26a72cd46241c47e29bce85c070a3e8a8407b04670f729dc2576fec.jpeg"}],["$","meta","28",{"name":"twitter:image:alt","content":"BM6GD11BFJ-LBE2 - Rohm Semiconductor"}],["$","link","29",{"rel":"icon","href":"/favicon/favicon.ico"}],["$","meta","30",{"name":"next-size-adjust"}]]