Integrated Circuits (ICs)

IRS2111SPBF

Obsolete

GATE DRIVERS HALF BRDG DRVR 600V 650NS 200MA

Search across all available documentation for this part.

Integrated Circuits (ICs)

Obsolete

GATE DRIVERS HALF BRDG DRVR 600V 650NS 200MA

Technical Specifications

Parameters and characteristics for this part

Specification	IRS2111SPBF

Channel Type	Synchronous
Current - Peak Output (Source, Sink) [custom]	600 mA
Current - Peak Output (Source, Sink) [custom]	290 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting, Inverting
Logic Voltage - VIL, VIH [custom]	8.3 V
Logic Voltage - VIL, VIH [custom]	12.6 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Rise / Fall Time (Typ)	75 ns
Rise / Fall Time (Typ)	35 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	Gate Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Type	Number of Drivers	Rise / Fall Time (Typ)	Rise / Fall Time (Typ)	Channel Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	High Side Voltage - Max (Bootstrap) [Max]	Package / Case	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Mounting Type	Supplier Device Package	Driven Configuration	Package / Case	Package / Case
INFINEON IRS2111PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	Inverting Non-Inverting	2	75 ns	35 ns	Synchronous	20 V	10 VDC	600 mA	290 mA	600 V	8-DIP (0.300" 7.62mm)	8.3 V	12.6 V	Through Hole	8-PDIP	Half-Bridge
INFINEON IRS2111SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	Inverting Non-Inverting	2	75 ns	35 ns	Synchronous	20 V	10 VDC	600 mA	290 mA	600 V	8-SOIC	8.3 V	12.6 V	Surface Mount	8-SOIC	Half-Bridge	0.154 in	3.9 mm
INFINEON IRS2111PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	Inverting Non-Inverting	2	75 ns	35 ns	Synchronous	20 V	10 VDC	600 mA	290 mA	600 V	8-DIP (0.300" 7.62mm)	8.3 V	12.6 V	Through Hole	8-PDIP	Half-Bridge
INFINEON IRS2111STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	Inverting Non-Inverting	2	75 ns	35 ns	Synchronous	20 V	10 VDC	600 mA	290 mA	600 V	8-SOIC	8.3 V	12.6 V	Surface Mount	8-SOIC	Half-Bridge	0.154 in	3.9 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Half-Bridge Gate Driver IC Inverting, Non-Inverting 8-SOIC

Technical documentation and resources