IRS2111 Series
Manufacturer: INFINEON
IC GATE DRVR HALF-BRIDGE 8DIP
| Part | Gate Type | Operating Temperature [Min] | Operating Temperature [Max] | Input Type | Number of Drivers | Rise / Fall Time (Typ) | Rise / Fall Time (Typ) | Channel Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | High Side Voltage - Max (Bootstrap) [Max] | Package / Case | Logic Voltage - VIL, VIH [custom] | Logic Voltage - VIL, VIH [custom] | Mounting Type | Supplier Device Package | Driven Configuration | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | -40 °C | 150 °C | Inverting Non-Inverting | 2 | 75 ns | 35 ns | Synchronous | 20 V | 10 VDC | 600 mA | 290 mA | 600 V | 8-DIP (0.300" 7.62mm) | 8.3 V | 12.6 V | Through Hole | 8-PDIP | Half-Bridge | ||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | -40 °C | 150 °C | Inverting Non-Inverting | 2 | 75 ns | 35 ns | Synchronous | 20 V | 10 VDC | 600 mA | 290 mA | 600 V | 8-SOIC | 8.3 V | 12.6 V | Surface Mount | 8-SOIC | Half-Bridge | 0.154 in | 3.9 mm |
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | -40 °C | 150 °C | Inverting Non-Inverting | 2 | 75 ns | 35 ns | Synchronous | 20 V | 10 VDC | 600 mA | 290 mA | 600 V | 8-DIP (0.300" 7.62mm) | 8.3 V | 12.6 V | Through Hole | 8-PDIP | Half-Bridge | ||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | -40 °C | 150 °C | Inverting Non-Inverting | 2 | 75 ns | 35 ns | Synchronous | 20 V | 10 VDC | 600 mA | 290 mA | 600 V | 8-SOIC | 8.3 V | 12.6 V | Surface Mount | 8-SOIC | Half-Bridge | 0.154 in | 3.9 mm |