Integrated Circuits (ICs)

IRS2111PBF

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IC GATE DRVR HALF-BRIDGE 8DIP

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Integrated Circuits (ICs)

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IC GATE DRVR HALF-BRIDGE 8DIP

Technical Specifications

Parameters and characteristics for this part

Specification	IRS2111PBF

Channel Type	Synchronous
Current - Peak Output (Source, Sink) [custom]	600 mA
Current - Peak Output (Source, Sink) [custom]	290 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting, Inverting
Logic Voltage - VIL, VIH [custom]	8.3 V
Logic Voltage - VIL, VIH [custom]	12.6 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-DIP (0.300", 7.62mm)
Rise / Fall Time (Typ)	75 ns
Rise / Fall Time (Typ)	35 ns
Supplier Device Package	8-PDIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	Gate Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Type	Number of Drivers	Rise / Fall Time (Typ)	Rise / Fall Time (Typ)	Channel Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	High Side Voltage - Max (Bootstrap) [Max]	Package / Case	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Mounting Type	Supplier Device Package	Driven Configuration	Package / Case	Package / Case
INFINEON IRS2111PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	Inverting Non-Inverting	2	75 ns	35 ns	Synchronous	20 V	10 VDC	600 mA	290 mA	600 V	8-DIP (0.300" 7.62mm)	8.3 V	12.6 V	Through Hole	8-PDIP	Half-Bridge
INFINEON IRS2111SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	Inverting Non-Inverting	2	75 ns	35 ns	Synchronous	20 V	10 VDC	600 mA	290 mA	600 V	8-SOIC	8.3 V	12.6 V	Surface Mount	8-SOIC	Half-Bridge	0.154 in	3.9 mm
INFINEON IRS2111PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	Inverting Non-Inverting	2	75 ns	35 ns	Synchronous	20 V	10 VDC	600 mA	290 mA	600 V	8-DIP (0.300" 7.62mm)	8.3 V	12.6 V	Through Hole	8-PDIP	Half-Bridge
INFINEON IRS2111STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	Inverting Non-Inverting	2	75 ns	35 ns	Synchronous	20 V	10 VDC	600 mA	290 mA	600 V	8-SOIC	8.3 V	12.6 V	Surface Mount	8-SOIC	Half-Bridge	0.154 in	3.9 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Half-Bridge Gate Driver IC Inverting, Non-Inverting 8-PDIP

Technical documentation and resources