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TO-18
Discrete Semiconductor Products

MX2N4093

Active
Microchip Technology

FIELD EFFECT TRANSISTOR FET N-CHANNEL SILICON 40V

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TO-18
Discrete Semiconductor Products

MX2N4093

Active
Microchip Technology

FIELD EFFECT TRANSISTOR FET N-CHANNEL SILICON 40V

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMX2N4093
Current - Drain (Idss) @ Vds (Vgs=0)8 mA
Drain to Source Voltage (Vdss)40 V
FET TypeN-Channel
GradeMilitary
Input Capacitance (Ciss) (Max) @ Vds16 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-65 °C
Package / CaseTO-18-3 Metal Can, TO-206AA
Power - Max [Max]360 mW
QualificationMIL-PRF-19500/431
Resistance - RDS(On)80 Ohms
Supplier Device PackageTO-18
Supplier Device PackageTO-206AA
Voltage - Breakdown (V(BR)GSS)40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 67.70
Microchip DirectN/A 1$ 72.90
NewarkEach 100$ 67.70
500$ 65.09

Description

General part information

MX2N4093-JFET-NChannel Series

This specification covers the performance requirements for N-channel, junction, silicon field-effect, 2N4091, 2N4092 and 2N4093 transistors intended for use in chopper and analog gate circuit applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/431.

Documents

Technical documentation and resources