MX2N4093-JFET-NChannel Series

Field Effect Transistor FET N-Channel Silicon 40V

Catalog

Field Effect Transistor FET N-Channel Silicon 40V

Part	Supplier Device Package	Supplier Device Package	Grade	Package / Case	Qualification	Drain to Source Voltage (Vdss)	Voltage - Breakdown (V(BR)GSS)	Current - Drain (Idss) @ Vds (Vgs=0)	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Resistance - RDS(On)	Mounting Type	FET Type
Microchip Technology MX2N4093	TO-18	TO-206AA	Military	TO-18-3 Metal Can TO-206AA	MIL-PRF-19500/431	40 V	40 V	8 mA	360 mW	175 ░C	-65 °C	16 pF	80 Ohms	Through Hole	N-Channel

Catalog

Field Effect Transistor FET N-Channel Silicon 40V

Key Features

- The device packages for the encapsulated device types are as follows: (similar to TO-18) and surfacemount LCC3 (UB).

- These devices are test to 19500 specifications with added prefix MQ - equivalent to JAN, MX - equivalent to JANX and MV equivalent to JANTX.

Description

This specification covers the performance requirements for N-channel, junction, silicon field-effect, 2N4091, 2N4092 and 2N4093 transistors intended for use in chopper and analog gate circuit applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/431.