Discrete Semiconductor Products
STGB7NC60HDT4
ActiveSTMicroelectronics
N-CHANNEL 14 A, 600 V, VERY FAST IGBT WITH ULTRAFAST DIODE
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Discrete Semiconductor Products
STGB7NC60HDT4
ActiveSTMicroelectronics
N-CHANNEL 14 A, 600 V, VERY FAST IGBT WITH ULTRAFAST DIODE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STGB7NC60HDT4 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 25 A |
| Current - Collector Pulsed (Icm) | 50 A |
| Gate Charge | 35 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power - Max [Max] | 80 W |
| Reverse Recovery Time (trr) | 37 ns |
| Supplier Device Package | D2PAK |
| Switching Energy | 95 µJ, 115 µJ |
| Td (on/off) @ 25°C [custom] | 72 ns |
| Td (on/off) @ 25°C [custom] | 18.5 ns |
| Test Condition | 7 A, 10 Ohm, 15 V, 390 V |
| Vce(on) (Max) @ Vge, Ic | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGB7 Series
These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications.
