TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Discrete Semiconductor Products

STGB7NB60KDT4

Obsolete

STMicroelectronics

IGBT 600V 14A 80W D2PAK

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Discrete Semiconductor Products

STGB7NB60KDT4

Obsolete

STMicroelectronics

IGBT 600V 14A 80W D2PAK

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGB7NB60KDT4

Current - Collector (Ic) (Max) [Max]	14 A
Current - Collector Pulsed (Icm)	56 A
Gate Charge	32.7 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power - Max [Max]	80 W
Reverse Recovery Time (trr)	50 ns
Supplier Device Package	D2PAK
Switching Energy	140 µJ
Td (on/off) @ 25°C [custom]	50 ns
Td (on/off) @ 25°C [custom]	15 ns
Test Condition	7 A, 15 V, 10 Ohm, 480 V
Vce(on) (Max) @ Vge, Ic	2.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

STGB7 Series

N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Part	Current - Collector (Ic) (Max) [Max]	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max) [Max]	Switching Energy	Reverse Recovery Time (trr)	Vce(on) (Max) @ Vge, Ic	Mounting Type	Gate Charge	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Test Condition	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Supplier Device Package	Package / Case	Operating Temperature
STMicroelectronics STGB7NC60HDT4	25 A	50 A	600 V	95 µJ 115 µJ	37 ns	2.5 V	Surface Mount	35 nC	80 W	150 °C	-55 °C	7 A 10 Ohm 15 V 390 V	72 ns	18.5 ns	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
STMicroelectronics STGB7NB60KDT4	14 A	56 A	600 V	140 µJ	50 ns	2.8 V	Surface Mount	32.7 nC	80 W			7 A 10 Ohm 15 V 480 V	50 ns	15 ns	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.85

Description

General part information

STGB7 Series

These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications.

Documents

Technical documentation and resources