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Discrete Semiconductor Products

CSD25404Q3

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Texas Instruments

-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 6.5 MOHM

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VSON-CLIP (DQG)
Discrete Semiconductor Products

CSD25404Q3

Active
Texas Instruments

-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 6.5 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD25404Q3
Current - Continuous Drain (Id) @ 25°C104 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs14.1 nC
Input Capacitance (Ciss) (Max) @ Vds2120 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Rds On (Max) @ Id, Vgs6.5 mOhm
Supplier Device Package8-VSONP (3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id1.15 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.19
10$ 0.83
100$ 0.64
500$ 0.52
1000$ 0.48
Digi-Reel® 1$ 1.19
10$ 0.83
100$ 0.64
500$ 0.52
1000$ 0.48
Tape & Reel (TR) 2500$ 0.43
5000$ 0.40
7500$ 0.38
12500$ 0.38
Texas InstrumentsLARGE T&R 1$ 0.75
100$ 0.57
250$ 0.42
1000$ 0.30

Description

General part information

CSD25404Q3 Series

This -20 V, 5.5 mΩ NexFET power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.

This -20 V, 5.5 mΩ NexFET power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.