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PowerPAK-1212-8SH_Bottom
Discrete Semiconductor Products

SISS32LDN-T1-GE3

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PowerPAK-1212-8SH_Bottom
Discrete Semiconductor Products

SISS32LDN-T1-GE3

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSISS32LDN-T1-GE3
Current - Continuous Drain (Id) @ 25°C63 A
Current - Continuous Drain (Id) @ 25°C17.4 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs57 nC
Input Capacitance (Ciss) (Max) @ Vds2550 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® 1212-8SH
Power Dissipation (Max)5 W, 65.7 W
Rds On (Max) @ Id, Vgs7.2 mOhm
Supplier Device PackagePowerPAK® 1212-8SH
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.16
10$ 0.95
100$ 0.74
500$ 0.63
1000$ 0.51
Digi-Reel® 1$ 1.76
10$ 1.11
100$ 0.75
500$ 0.59
1000$ 0.54
Tape & Reel (TR) 3000$ 0.48
6000$ 0.46
9000$ 0.44

Description

General part information

SISS32 Series

N-Channel 80 V 17.4A (Ta), 63A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8SH

Documents

Technical documentation and resources