SISS32 Series

Catalog

MOSFET N-CH 80V 17.4A/63A PPAK

Part	Vgs (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]
Vishay General Semiconductor - Diodes Division SISS32LDN-T1-GE3	20 V	Surface Mount	-55 °C	150 °C	2.5 V	2550 pF	PowerPAK® 1212-8SH	PowerPAK® 1212-8SH	4.5 V 10 V	80 V	7.2 mOhm	N-Channel	MOSFET (Metal Oxide)	57 nC	63 A	17.4 A	5 W 65.7 W
Vishay General Semiconductor - Diodes Division SISS32DN-T1-GE3	20 V	Surface Mount	-55 °C	150 °C	3.8 V	1930 pF	PowerPAK® 1212-8S	PowerPAK® 1212-8S		80 V	7.2 mOhm	N-Channel	MOSFET (Metal Oxide)	42 nC	63 A	17.4 A	5 W 65.7 W	10 V	7.5 V