Discrete Semiconductor Products

SISS32DN-T1-GE3

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MOSFET N-CH 80V 17.4A/63A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 80V 17.4A/63A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISS32DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	63 A
Current - Continuous Drain (Id) @ 25°C	17.4 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Input Capacitance (Ciss) (Max) @ Vds	1930 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8S
Power Dissipation (Max)	5 W, 65.7 W
Rds On (Max) @ Id, Vgs	7.2 mOhm
Supplier Device Package	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

Part	Vgs (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]
Vishay General Semiconductor - Diodes Division SISS32LDN-T1-GE3	20 V	Surface Mount	-55 °C	150 °C	2.5 V	2550 pF	PowerPAK® 1212-8SH	PowerPAK® 1212-8SH	4.5 V 10 V	80 V	7.2 mOhm	N-Channel	MOSFET (Metal Oxide)	57 nC	63 A	17.4 A	5 W 65.7 W
Vishay General Semiconductor - Diodes Division SISS32DN-T1-GE3	20 V	Surface Mount	-55 °C	150 °C	3.8 V	1930 pF	PowerPAK® 1212-8S	PowerPAK® 1212-8S		80 V	7.2 mOhm	N-Channel	MOSFET (Metal Oxide)	42 nC	63 A	17.4 A	5 W 65.7 W	10 V	7.5 V

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General part information

N-Channel 80 V 17.4A (Ta), 63A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

Technical documentation and resources