Zenode.ai Logo
Beta
PowerPAK SO-8
Discrete Semiconductor Products

SIR104DP-T1-RE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 18.3A/79A PPAK

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
PowerPAK SO-8
Discrete Semiconductor Products

SIR104DP-T1-RE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 18.3A/79A PPAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSIR104DP-T1-RE3
Current - Continuous Drain (Id) @ 25°C18.3 A
Current - Continuous Drain (Id) @ 25°C79 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]84 nC
Input Capacitance (Ciss) (Max) @ Vds4230 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® SO-8
Power Dissipation (Max)100 W, 5.4 W
Rds On (Max) @ Id, Vgs6.4 mOhm
Supplier Device PackagePowerPAK® SO-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.39
10$ 1.99
100$ 1.58
500$ 1.34
1000$ 1.14
Digi-Reel® 1$ 2.39
10$ 1.99
100$ 1.58
500$ 1.34
1000$ 1.14
Tape & Reel (TR) 3000$ 1.00

Description

General part information

SIR104 Series

N-Channel 100 V 18.3A (Ta), 79A (Tc) 5.4W (Ta), 100W (Tc) Surface Mount PowerPAK® SO-8

Documents

Technical documentation and resources