SIR104 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 100V 18.3A/79A PPAK
| Part | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Vgs(th) (Max) @ Id | Technology | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Current - Continuous Drain (Id) @ 25°C | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Mounting Type | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | N-Channel | 3.5 V | MOSFET (Metal Oxide) | 20 V | 84 nC | 18.3 A | 79 A | PowerPAK® SO-8 | 4230 pF | 10 V | 7.5 V | Surface Mount | 100 V | 5.4 W 100 W | 6.4 mOhm | PowerPAK® SO-8 |
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | N-Channel | 4 V | MOSFET (Metal Oxide) | 20 V | 70 nC | 18.8 A 81 A | PowerPAK® SO-8 | 3250 pF | 10 V | 7.5 V | Surface Mount | 100 V | 5.4 W 100 W | 6.1 mOhm | PowerPAK® SO-8 |