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PowerPAK SO-8
Discrete Semiconductor Products

SIR104ADP-T1-RE3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 18.8A/81A PPAK

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PowerPAK SO-8
Discrete Semiconductor Products

SIR104ADP-T1-RE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 18.8A/81A PPAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSIR104ADP-T1-RE3
Current - Continuous Drain (Id) @ 25°C18.8 A, 81 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]70 nC
Input Capacitance (Ciss) (Max) @ Vds3250 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® SO-8
Power Dissipation (Max)100 W, 5.4 W
Rds On (Max) @ Id, Vgs6.1 mOhm
Supplier Device PackagePowerPAK® SO-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.99
10$ 1.65
100$ 1.31
500$ 1.11
1000$ 0.94
Digi-Reel® 1$ 1.99
10$ 1.65
100$ 1.31
500$ 1.11
1000$ 0.94
Tape & Reel (TR) 3000$ 0.90
6000$ 0.86
9000$ 0.83

Description

General part information

SIR104 Series

N-Channel 100 V 18.8A (Ta), 81A (Tc) 5.4W (Ta), 100W (Tc) Surface Mount PowerPAK® SO-8

Documents

Technical documentation and resources