STPSC40065CW
ActiveSILICON CARBIDE SCHOTTKY DIODE, DUAL COMMON CATHODE, 650 V, 40 A, 62 NC, TO-247
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STPSC40065CW
ActiveSILICON CARBIDE SCHOTTKY DIODE, DUAL COMMON CATHODE, 650 V, 40 A, 62 NC, TO-247
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Technical Specifications
Parameters and characteristics for this part
| Specification | STPSC40065CW |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 20 A |
| Current - Reverse Leakage @ Vr | 300 µA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-247-3 |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | TO-247-3 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 20 A |
| Voltage - Forward (Vf) (Max) @ If [Max] | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STPSC40065C Series
The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Used as a freewheeling or output rectification diode, this rectifier will enhance the performance and form factor of the targeted power supply or inverter.
Documents
Technical documentation and resources