STPSC40065C Series

650 V power Schottky silicon-carbide diode

Catalog

650 V power Schottky silicon-carbide diode

Part	Package / Case	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Diode Configuration	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)	Supplier Device Package	Technology
STMicroelectronics STPSC40065CW	TO-247-3	-40 °C	175 ░C	1 Pair Common Cathode	650 V	200 mA 500 ns	Through Hole	20 A	1.7 V	300 µA	20 A	TO-247-3	SiC (Silicon Carbide) Schottky

Catalog

650 V power Schottky silicon-carbide diode

Description

The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Used as a freewheeling or output rectification diode, this rectifier will enhance the performance and form factor of the targeted power supply or inverter.