STGD4H60DF
ActiveTRENCH GATE FIELD-STOP 600 V, 4 A HIGH SPEED H SERIES IGBT IN A DPAK PACKAGE
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STGD4H60DF
ActiveTRENCH GATE FIELD-STOP 600 V, 4 A HIGH SPEED H SERIES IGBT IN A DPAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STGD4H60DF |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 8 A |
| Current - Collector Pulsed (Icm) | 16 A |
| Gate Charge | 35 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power - Max [Max] | 75 W |
| Reverse Recovery Time (trr) | 73 ns |
| Supplier Device Package | DPAK (TO-252) type C2 |
| Td (on/off) @ 25°C [Max] | 121 ns |
| Td (on/off) @ 25°C [Min] | 35 ns |
| Test Condition | 15 V, 3 A, 400 V, 47 Ohm |
| Vce(on) (Max) @ Vge, Ic | 1.95 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
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Description
General part information
STGD4H60DF Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.