STGD4H60DF Series

Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package

Catalog

Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package

Part	Mounting Type	Power - Max [Max]	Td (on/off) @ 25°C [Min]	Td (on/off) @ 25°C [Max]	Supplier Device Package	Reverse Recovery Time (trr)	Current - Collector Pulsed (Icm)	IGBT Type	Test Condition	Package / Case	Vce(on) (Max) @ Vge, Ic	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]
STMicroelectronics STGD4H60DF	Surface Mount	75 W	35 ns	121 ns	DPAK (TO-252) type C2	73 ns	16 A	Trench Field Stop	3 A 15 V 47 Ohm 400 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.95 V	35 nC	600 V	175 °C	-55 °C	8 A

Catalog

Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.