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SOT-363
Discrete Semiconductor Products

NTJD1155LT2G

Active
ON Semiconductor

DUAL P-CHANNEL HIGH SIDE LOAD SWITCH WITH LEVEL-SHIFT POWER MOSFET -8V ±1.3A 175MΩ

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DocumentsDatasheetDatasheet+1
SOT-363
Discrete Semiconductor Products

NTJD1155LT2G

Active
ON Semiconductor

DUAL P-CHANNEL HIGH SIDE LOAD SWITCH WITH LEVEL-SHIFT POWER MOSFET -8V ±1.3A 175MΩ

Deep-Dive with AI

DocumentsDatasheetDatasheet+1

Technical Specifications

Parameters and characteristics for this part

SpecificationNTJD1155LT2G
ConfigurationN and P-Channel
Drain to Source Voltage (Vdss)8 V
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max [Max]400 mW
Rds On (Max) @ Id, Vgs175 mOhm
Supplier Device PackageSC70-6, SC-88, SOT-363
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 3000$ 0.49
6000$ 0.49
DigikeyCut Tape (CT) 1$ 0.51
10$ 0.40
100$ 0.24
500$ 0.22
1000$ 0.15
Digi-Reel® 1$ 0.51
10$ 0.40
100$ 0.24
500$ 0.22
1000$ 0.15
Tape & Reel (TR) 3000$ 0.14
6000$ 0.13
9000$ 0.12
30000$ 0.12
75000$ 0.11
NewarkEach 2500$ 0.14
10000$ 0.14
25000$ 0.11
ON SemiconductorN/A 1$ 0.06

Description

General part information

NTJD1155L Series

The NTJD1155L integrates a P and N-Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. TheP-Channel device is specifically designed as a load switch using ON Semiconductor state-of-the-art trench technology. The N-Channel, with an external resistor (R1), functions as a level-shift to drive the P-Channel. The N-Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTJD1155L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both VINand VON/OFF.