NTJD1155LT1G
ActiveDUAL P-CHANNEL HIGH SIDE LOAD SWITCH WITH LEVEL-SHIFT POWER MOSFET -8V ±1.3A 175MΩ
NTJD1155LT1G
ActiveDUAL P-CHANNEL HIGH SIDE LOAD SWITCH WITH LEVEL-SHIFT POWER MOSFET -8V ±1.3A 175MΩ
Technical Specifications
Parameters and characteristics for this part
| Specification | NTJD1155LT1G |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.3 A |
| Drain to Source Voltage (Vdss) | 8 V |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Power - Max [Max] | 400 mW |
| Rds On (Max) @ Id, Vgs | 175 mOhm |
| Supplier Device Package | SC70-6, SC-88, SOT-363 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.47 | |
| 10 | $ 0.41 | |||
| 100 | $ 0.28 | |||
| 500 | $ 0.22 | |||
| 1000 | $ 0.18 | |||
| Digi-Reel® | 1 | $ 0.47 | ||
| 10 | $ 0.41 | |||
| 100 | $ 0.28 | |||
| 500 | $ 0.22 | |||
| 1000 | $ 0.18 | |||
| Tape & Reel (TR) | 3000 | $ 0.16 | ||
| 6000 | $ 0.15 | |||
| 9000 | $ 0.14 | |||
| 30000 | $ 0.14 | |||
| Newark | Each (Supplied on Full Reel) | 3000 | $ 0.21 | |
| 6000 | $ 0.19 | |||
| 12000 | $ 0.17 | |||
| 18000 | $ 0.15 | |||
| 30000 | $ 0.14 | |||
| ON Semiconductor | N/A | 1 | $ 0.06 | |
Description
General part information
NTJD1155L Series
The NTJD1155L integrates a P and N-Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. TheP-Channel device is specifically designed as a load switch using ON Semiconductor state-of-the-art trench technology. The N-Channel, with an external resistor (R1), functions as a level-shift to drive the P-Channel. The N-Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTJD1155L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both VINand VON/OFF.
Documents
Technical documentation and resources