Discrete Semiconductor Products

BYR29X-800PQ

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DIODE GEN PURP 800V 8A TO220FP

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Discrete Semiconductor Products

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DIODE GEN PURP 800V 8A TO220FP

Technical Specifications

Parameters and characteristics for this part

Specification	BYR29X-800PQ

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Package / Case	TO-220-2 Full Pack, Isolated Tab
Reverse Recovery Time (trr)	55 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-220FP
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Supplier Device Package	Operating Temperature - Junction [Max]	Technology	Package / Case	Speed	Mounting Type	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If
WeEn Semiconductors BYR29-800,127	TO-220AC	150 °C	Standard	TO-220-2	200 mA 500 ns	Through Hole	8 A	10 µA	75 ns	800 V	1.5 V
WeEn Semiconductors BYR29X-800PQ	TO-220FP	175 ░C	Standard	TO-220-2 Full Pack Isolated Tab	200 mA 500 ns	Through Hole	8 A	10 µA	55 ns	800 V	1.7 V
WeEn Semiconductors BYR29X-800,127	TO-220FP	150 °C	Standard	TO-220-2 Full Pack Isolated Tab	200 mA 500 ns	Through Hole	8 A	10 µA	75 ns	800 V	1.7 V
WeEn Semiconductors BYR29X-600,127	TO-220FP	150 °C	Standard	TO-220-2 Full Pack Isolated Tab	200 mA 500 ns	Through Hole	8 A	10 µA	75 ns	600 V	1.7 V
WeEn Semiconductors BYR29-600,127	TO-220AC	150 °C	Standard	TO-220-2	200 mA 500 ns	Through Hole	8 A	10 µA	75 ns	600 V	1.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 8A Through Hole TO-220FP

Technical documentation and resources

No documents available