Discrete Semiconductor Products

SCT20N120AG

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STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 1200 V, 20 A, 189 MOHM (TYP., TJ = 150 C) IN AN HIP247 PACKAGE

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DocumentsSCT20N120AG | Datasheet TN1225 +25

Discrete Semiconductor Products

SCT20N120AG

Active

STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 1200 V, 20 A, 189 MOHM (TYP., TJ = 150 C) IN AN HIP247 PACKAGE

Deep-Dive with AI

DocumentsSCT20N120AG | Datasheet TN1225 +25

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT20N120AG

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	1.2 kV
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	650 pF
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-55 ░C
Package / Case	TO-247-3
Power Dissipation (Max)	153 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	239 mOhm
Supplier Device Package	HiP247™
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	3.5 V

SCT20N120AG Series

Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Grade	Vgs (Max) [Max]	Vgs (Max) [Min]	Mounting Type	Package / Case	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Qualification	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
STMicroelectronics SCT20N120AG	20 A	HiP247™	Automotive	25 V	-10 V	Through Hole	TO-247-3	N-Channel	650 pF	3.5 V	200 °C	-55 ░C	AEC-Q101	1.2 kV	45 nC	239 mOhm	153 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	23	$ 14.75
Newark	Each	1	$ 20.81
		10	$ 19.00
		25	$ 16.00
		60	$ 15.50

Description

General part information

SCT20N120AG Series

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.