SCT20N120AG Series

Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package

Catalog

Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Grade	Vgs (Max) [Max]	Vgs (Max) [Min]	Mounting Type	Package / Case	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Qualification	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
STMicroelectronics SCT20N120AG	20 A	HiP247™	Automotive	25 V	-10 V	Through Hole	TO-247-3	N-Channel	650 pF	3.5 V	200 °C	-55 ░C	AEC-Q101	1.2 kV	45 nC	239 mOhm	153 W

Catalog

Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.