SCTH40N120G2V7AG
LTBAUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 1200 V, 75 MOHM TYP., 33 A IN AN H2PAK-7 PACKAGE
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SCTH40N120G2V7AG
LTBAUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 1200 V, 75 MOHM TYP., 33 A IN AN H2PAK-7 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | SCTH40N120G2V7AG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 33 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1230 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-263CA, D2PAK (7 Leads + Tab), TO-263-8 |
| Power Dissipation (Max) | 250 W |
| Qualification | AEC-Q101 |
| Supplier Device Package | H2PAK-7 |
| Vgs (Max) [Max] | 22 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCTH40N120G2V7AG Series
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Documents
Technical documentation and resources