SCTH40N120G2V7AG Series

Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H2PAK-7 package

Catalog

Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H2PAK-7 package

Part	Vgs (Max) [Max]	Vgs (Max) [Min]	Qualification	Grade	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)
STMicroelectronics SCTH40N120G2V7AG	22 V	-10 V	AEC-Q101	Automotive	63 nC	N-Channel	18 V	175 °C	-55 °C	33 A	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	5 V	1.2 kV	H2PAK-7	Surface Mount	1230 pF	250 W

Catalog

Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H2PAK-7 package

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.