Discrete Semiconductor Products
STL62P3LLH6
ObsoleteSTMicroelectronics
P-CHANNEL 30 V, 0.009 OHM TYP., 62 A STRIPFET H6 POWER MOSFET IN A POWERFLAT 5X6 PACKAGE
Discrete Semiconductor Products
STL62P3LLH6
ObsoleteSTMicroelectronics
P-CHANNEL 30 V, 0.009 OHM TYP., 62 A STRIPFET H6 POWER MOSFET IN A POWERFLAT 5X6 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STL62P3LLH6 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 62 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3350 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 100 W |
| Rds On (Max) @ Id, Vgs | 10.5 mOhm |
| Supplier Device Package | PowerFlat™ (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.56 | |
Description
General part information
STL62P3LLH6 Series
This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.
Documents
Technical documentation and resources