Zenode.ai Logo
Beta
T-MAX Pkg
Discrete Semiconductor Products

APT33GF120B2RDQ2G

Active
Microchip Technology

1200V NON-PUNCH-THRU IGBT

Deep-Dive with AI

Search across all available documentation for this part.

T-MAX Pkg
Discrete Semiconductor Products

APT33GF120B2RDQ2G

Active
Microchip Technology

1200V NON-PUNCH-THRU IGBT

Technical Specifications

Parameters and characteristics for this part

SpecificationAPT33GF120B2RDQ2G
Current - Collector (Ic) (Max) [Max]64 A
Current - Collector Pulsed (Icm)75 A
Gate Charge170 nC
IGBT TypeNPT
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3 Variant
Power - Max [Max]357 W
Switching Energy1.515 mJ, 1.315 mJ
Td (on/off) @ 25°C185 ns, 14 ns
Test Condition800 V, 25 A, 15 V, 4.3 Ohm
Vce(on) (Max) @ Vge, Ic3 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 18.19
100$ 14.76
Microchip DirectTUBE 1$ 18.19
100$ 15.71
250$ 15.11
500$ 14.78
1000$ 14.41
5000$ 13.93

Description

General part information

IGBT-NPT-1200V Series

IGBT products from Microchip provide high-quality solutions for a

wide range of high-voltage and high-power applications. The switching frequency

range spans from DC for minimal conduction loss to 150 kHz for