IGBT-NPT-1200V Series

600V Ultrafast Soft Recovery Rectifier Diode

Catalog

600V Ultrafast Soft Recovery Rectifier Diode

Part	Mounting Type	Current - Collector Pulsed (Icm)	Supplier Device Package	Test Condition	Gate Charge	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	IGBT Type	Td (on/off) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Configuration	Input	Input Capacitance (Cies) @ Vce	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Switching Energy	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Current - Collector (Ic) (Max)	Diode Configuration	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io) (per Diode)	Speed	Reverse Recovery Time (trr)
Microchip Technology APT85GR120L	Through Hole	340 A	TO-264	4.3 Ohm 15 V 85 A 600 V	660 nC	TO-264-3 TO-264AA	1200 V	962 W	3.2 V	NPT	43 ns 300 ns	-55 °C	150 °C
Microchip Technology APT50GT120JRDQ2	Chassis Mount		ISOTOP®			ISOTOP	1200 V	379 W	3.7 V	NPT		-55 °C	150 °C	72 A	400 µA	Single	Standard	2.5 nF
Microchip Technology APT40M70LVRG	Through Hole		TO-264 (L)			TO-264-3 TO-264AA						-55 °C	150 °C						57 A	520 W	30 V	400 V	4 V	495 nC	N-Channel	MOSFET (Metal Oxide)	70 mOhm	8890 pF	10 V
Microchip Technology APT70GR120JD60	Chassis Mount		SOT-227			SOT-227-4	1200 V	543 W	3.2 V	NPT		-55 °C	150 °C	112 A	1.1 mA	Single	Standard	7.26 nF
Microchip Technology APT33GF120B2RDQ2G	Through Hole	75 A		4.3 Ohm 15 V 25 A 800 V	170 nC	TO-247-3 Variant	1200 V	357 W	3 V	NPT	14 ns 185 ns	-55 °C	150 °C	64 A																1.315 mJ 1.515 mJ
Microchip Technology APT15GT120BRDQ1G	Through Hole	45 A	TO-247 [B]	5 Ohm 15 A 15 V 800 V	105 nC	TO-247-3	1200 V	250 W	3.6 V	NPT		-55 °C	150 °C	36 A																260 µJ 585 µJ	10 ns	85 ns
Microchip Technology APT25GT120BRDQ2G	Through Hole	75 A	TO-247 [B]	5 Ohm 15 V 25 A 800 V	170 nC	TO-247-3	1200 V	347 W	3.7 V	NPT		-55 °C	150 °C																	720 µJ 930 µJ	14 ns	150 ns	54 A
Microchip Technology APT40GF120JRD	Chassis Mount		SOT-227 (ISOTOP®)			SOT-227-4 miniBLOC	1200 V	390 W	3.4 V			-55 °C	150 °C	60 A	500 çA	Single	Standard	3.45 nF
Microchip Technology APT40GR120B	Through Hole		TO-247-3	4.3 Ohm 15 V 40 A 600 V	210 nC	TO-247-3	1200 V	500 W	3.2 V	NPT	22 ns 163 ns	-55 °C	150 °C	88 A																1.38 mJ 906 µJ
Microchip Technology APT40DQ100BCTG	Through Hole		TO-247 [B]			TO-247-3																				Standard								1 Pair Common Cathode	100 µA	1000 V	3 V	175 ░C	-55 C	40 A	200 mA 500 ns	250 ns

Catalog

600V Ultrafast Soft Recovery Rectifier Diode

Key Features

• * Ultrafast recovery times

• * Soft recovery

• * Low leakage current

• * Avalanche energy rated

• * AEC-Q101 qualified (FRED DQ in TO-247, TO-220 and TO-264)

• * Higher switching frequency

• * Low switching losses

• * Low noise (EMI) switching

• * Easy to parallel

• * Improved system reliability

• * AC-DC/DC-DC converters

• * Inverters

• * Switch mode power supply

• * H/EV chargers

• * H/EV onboard chargers & powertrain

Description

IGBT products from Microchip provide high-quality solutions for a wide range of high-voltage and high-power applications. The switching frequency range spans from DC for minimal conduction loss to 150 kHz for very-high-power-density Switch Mode Power Supply (SMPS) applications. There are six product series that utilize three different IGBT technologies: Non-Punch-Through (NPT), Punch-Through (PT) and field stop. All standard IGBT products are available as a single IGBT or as a Combi product packaged with an anti-parallel DQ series diode. The Ultra Fast NPT-IGBT® family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and the best trade-off between conduction and switching losses.