STGP30M65DF2
ActiveIGBTS TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 30 A LOW LOSS
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STGP30M65DF2
ActiveIGBTS TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 30 A LOW LOSS
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Technical Specifications
Parameters and characteristics for this part
| Specification | STGP30M65DF2 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 80 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 258 W |
| Reverse Recovery Time (trr) | 140 ns |
| Supplier Device Package | TO-220 |
| Switching Energy | 300 µJ, 960 µJ |
| Td (on/off) @ 25°C [custom] | 115 ns |
| Td (on/off) @ 25°C [custom] | 31.6 ns |
| Test Condition | 30 A, 10 Ohm, 15 V, 400 V |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGP30M65DF2 Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.