Discrete Semiconductor Products

MT3S111TU,LF

LTB

RF SIGE NPN BIPOLAR TRANSISTOR N

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Discrete Semiconductor Products

LTB

RF SIGE NPN BIPOLAR TRANSISTOR N

Technical Specifications

Parameters and characteristics for this part

Specification	MT3S111TU,LF

Current - Collector (Ic) (Max) [Max]	100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	10 GHz
Gain	12.5 dBi
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f) [Max]	0.85 dB
Noise Figure (dB Typ @ f) [Min]	0.6 dB
Operating Temperature	150 °C
Power - Max [Max]	800 mW
Supplier Device Package	UFM
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	6 V

Part	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Transistor Type	Noise Figure (dB Typ @ f)	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Gain	Frequency - Transition	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Noise Figure (dB Typ @ f) [Max]	Noise Figure (dB Typ @ f) [Min]
Toshiba Semiconductor and Storage MT3S111(TE85L,F)	S-Mini	100 mA	700 mW	NPN	1.2 dB	SC-59 SOT-23-3 TO-236-3	6 V	12 dBi	11.5 GHz	150 °C	200	Surface Mount
Toshiba Semiconductor and Storage MT3S111TU,LF	UFM	100 mA	800 mW	NPN			6 V	12.5 dBi	10 GHz	150 °C	200	Surface Mount	0.85 dB	0.6 dB
Toshiba Semiconductor and Storage MT3S111P(TE12L,F)	PW-MINI	100 mA	1 W	NPN	1.25 dB	TO-243AA	6 V	10.5 dBi	8 GHz	150 °C	200	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

RF Transistor NPN 6V 100mA 10GHz 800mW Surface Mount UFM

Technical documentation and resources