Discrete Semiconductor Products

MT3S111P(TE12L,F)

Obsolete

TRANS RF BJT NPN 6V 0.1A 300MW 4-PIN(3+TAB) PW-MINI T/R

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS RF BJT NPN 6V 0.1A 300MW 4-PIN(3+TAB) PW-MINI T/R

Technical Specifications

Parameters and characteristics for this part

Specification	MT3S111P(TE12L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	8 GHz
Gain	10.5 dBi
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f)	1.25 dB
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	1 W
Supplier Device Package	PW-MINI
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	6 V

Part	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Transistor Type	Noise Figure (dB Typ @ f)	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Gain	Frequency - Transition	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Noise Figure (dB Typ @ f) [Max]	Noise Figure (dB Typ @ f) [Min]
Toshiba Semiconductor and Storage MT3S111(TE85L,F)	S-Mini	100 mA	700 mW	NPN	1.2 dB	SC-59 SOT-23-3 TO-236-3	6 V	12 dBi	11.5 GHz	150 °C	200	Surface Mount
Toshiba Semiconductor and Storage MT3S111TU,LF	UFM	100 mA	800 mW	NPN			6 V	12.5 dBi	10 GHz	150 °C	200	Surface Mount	0.85 dB	0.6 dB
Toshiba Semiconductor and Storage MT3S111P(TE12L,F)	PW-MINI	100 mA	1 W	NPN	1.25 dB	TO-243AA	6 V	10.5 dBi	8 GHz	150 °C	200	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.46

General part information

RF Transistor NPN 6V 100mA 8GHz 1W Surface Mount PW-MINI

Technical documentation and resources