MT3S111 Series

Catalog

BIPOLAR TRANSISTOR ARRAY, NPN, 6 V, 100 MA, 160 MW

Part	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Transistor Type	Noise Figure (dB Typ @ f)	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Gain	Frequency - Transition	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Noise Figure (dB Typ @ f) [Max]	Noise Figure (dB Typ @ f) [Min]
Toshiba Semiconductor and Storage MT3S111(TE85L,F)	S-Mini	100 mA	700 mW	NPN	1.2 dB	SC-59 SOT-23-3 TO-236-3	6 V	12 dBi	11.5 GHz	150 °C	200	Surface Mount
Toshiba Semiconductor and Storage MT3S111TU,LF	UFM	100 mA	800 mW	NPN			6 V	12.5 dBi	10 GHz	150 °C	200	Surface Mount	0.85 dB	0.6 dB
Toshiba Semiconductor and Storage MT3S111P(TE12L,F)	PW-MINI	100 mA	1 W	NPN	1.25 dB	TO-243AA	6 V	10.5 dBi	8 GHz	150 °C	200	Surface Mount