
Discrete Semiconductor Products
APT50M65JFLL
ActiveMicrochip Technology
FREDFET MOS7 500 V 65 MOHM SOT-227 4 SOT-227 TUBE ROHS COMPLIANT: YES
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Discrete Semiconductor Products
APT50M65JFLL
ActiveMicrochip Technology
FREDFET MOS7 500 V 65 MOHM SOT-227 4 SOT-227 TUBE ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | APT50M65JFLL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 58 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 141 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 7010 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Power Dissipation (Max) [Max] | 520 W |
| Rds On (Max) @ Id, Vgs | 65 mOhm |
| Supplier Device Package | ISOTOP® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
FREDFET-500V Series
500V FREDFET
| Part | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Supplier Device Package | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Technology | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | Chassis Mount | 7010 pF | 520 W | ISOTOP® | SOT-227-4 miniBLOC | -55 °C | 150 °C | 141 nC | 30 V | N-Channel | 65 mOhm | 5 V | MOSFET (Metal Oxide) | 10 V | 500 V | 58 A | |||
Microchip Technology | Through Hole | 4440 pF | TO-247 [B] | TO-247-3 | 225 nC | N-Channel | 200 mOhm | MOSFET (Metal Oxide) | 500 V | 26 A | |||||||||
Microchip Technology | Surface Mount | D3PAK | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | -55 °C | 150 °C | 30 V | N-Channel | 190 mOhm | MOSFET (Metal Oxide) | 10 V | 500 V | 30 A | 115 nC | 415 W | |||||
Microchip Technology | Through Hole | 5280 pF | TO-247 [B] | TO-247-3 | 300 nC | N-Channel | MOSFET (Metal Oxide) | 500 V | 30 A | ||||||||||
Microchip Technology | Through Hole | T-MAX™ [B2] | TO-247-3 Variant | -55 °C | 150 °C | 30 V | N-Channel | 75 mOhm | 5 V | MOSFET (Metal Oxide) | 10 V | 500 V | 75 A | 290 nC | 1040 W | ||||
Microchip Technology | Chassis Mount | 19600 pF | ISOTOP® | SOT-227-4 miniBLOC | 1000 nC | N-Channel | 4 V | MOSFET (Metal Oxide) | 500 V | 77 A | 50 mOhm | ||||||||
Microchip Technology | Surface Mount | 5710 pF | 520 W | D3PAK | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | -55 °C | 150 °C | 145 nC | 30 V | N-Channel | 150 mOhm | MOSFET (Metal Oxide) | 10 V | 500 V | 37 A | ||||
Microchip Technology | Chassis Mount | 5590 pF | SOT-227 | SOT-227-4 miniBLOC | -55 °C | 150 °C | 123 nC | 30 V | N-Channel | 75 mOhm | MOSFET (Metal Oxide) | 10 V | 500 V | 51 A | 290 W | ||||
Microchip Technology | Through Hole | 5590 pF | TO-264 [L] | TO-264-3 TO-264AA | N-Channel | 75 mOhm | 5 V | MOSFET (Metal Oxide) | 500 V | 57 A | 125 nC | ||||||||
Microchip Technology | Surface Mount | 4440 pF | D3PAK | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 225 nC | N-Channel | 200 mOhm | MOSFET (Metal Oxide) | 500 V | 26 A |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 45.04 | |
| 100 | $ 36.56 | |||
| Microchip Direct | TUBE | 1 | $ 45.04 | |
| 100 | $ 38.89 | |||
| 250 | $ 37.44 | |||
| 500 | $ 36.56 | |||
| 1000 | $ 35.68 | |||
| 5000 | $ 34.51 | |||
| Newark | Each | 1 | $ 45.04 | |
| 100 | $ 38.89 | |||
| 250 | $ 37.44 | |||
| 500 | $ 36.56 | |||
Description
General part information
FREDFET-500V Series
Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel
switch-mode power transistors with lower EMI characteristics and lower cost
compared to previous generation devices. These MOSFETs / FREDFETs have been
Documents
Technical documentation and resources