FREDFET-500V Series

500V FREDFET

Catalog

500V FREDFET

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]
Microchip Technology APT50M65JFLL	Chassis Mount	7010 pF	520 W	ISOTOP®	SOT-227-4 miniBLOC	-55 °C	150 °C	141 nC	30 V	N-Channel	65 mOhm	5 V	MOSFET (Metal Oxide)	10 V	500 V	58 A
Microchip Technology APT5020BVFRG	Through Hole	4440 pF		TO-247 [B]	TO-247-3			225 nC		N-Channel	200 mOhm		MOSFET (Metal Oxide)		500 V	26 A
Microchip Technology APT30F50S	Surface Mount			D3PAK	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	-55 °C	150 °C		30 V	N-Channel	190 mOhm		MOSFET (Metal Oxide)	10 V	500 V	30 A	115 nC	415 W
Microchip Technology APT5017BVFRG	Through Hole	5280 pF		TO-247 [B]	TO-247-3			300 nC		N-Channel			MOSFET (Metal Oxide)		500 V	30 A
Microchip Technology APT75F50B2	Through Hole			T-MAX™ [B2]	TO-247-3 Variant	-55 °C	150 °C		30 V	N-Channel	75 mOhm	5 V	MOSFET (Metal Oxide)	10 V	500 V	75 A	290 nC	1040 W
Microchip Technology APT50M50JVFR	Chassis Mount	19600 pF		ISOTOP®	SOT-227-4 miniBLOC			1000 nC		N-Channel		4 V	MOSFET (Metal Oxide)		500 V	77 A			50 mOhm
Microchip Technology APT37F50S	Surface Mount	5710 pF	520 W	D3PAK	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	-55 °C	150 °C	145 nC	30 V	N-Channel	150 mOhm		MOSFET (Metal Oxide)	10 V	500 V	37 A
Microchip Technology APT50M75JLLU2	Chassis Mount	5590 pF		SOT-227	SOT-227-4 miniBLOC	-55 °C	150 °C	123 nC	30 V	N-Channel	75 mOhm		MOSFET (Metal Oxide)	10 V	500 V	51 A		290 W
Microchip Technology APT50M75LFLLG	Through Hole	5590 pF		TO-264 [L]	TO-264-3 TO-264AA					N-Channel	75 mOhm	5 V	MOSFET (Metal Oxide)		500 V	57 A	125 nC
Microchip Technology APT5020SVFRG	Surface Mount	4440 pF		D3PAK	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA			225 nC		N-Channel	200 mOhm		MOSFET (Metal Oxide)		500 V	26 A

Key Features

• * Power Semiconductors, Power Modules and RF Power MOSFETs Catalog

• * Eliminating Parasitic Oscillation between Parallel MOSFETs

• * High Frequency Resonant Half Bridge

• * Improved Power MOSFETS Boost Efficiency IN A 3.5kw Single Phase PFC

• * Introduction to MOSFETs

• * Latest Technology PT IGBTs vs. Power MOSFETs

• * Making Use of Gate Charge Information In MOSFET and IGBT Data Sheets

• * Optimizing MOSFET and IGBT Gate Current to Minimize dv/dt Induced Failures in SMPS Circuits

• * Turn Off Snubber Design for High Frequency Modules

• * VDS(on) VCE(sat) Measurement

Description

Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These MOSFETs / FREDFETs have been optimized for both hard and soft switching in high frequency, high voltage applications rated above 500 W. The Power MOS 8™ series is a result of extensive research into quiet switching. Input and reverse transfer capacitance values as well as their ratio were set at specific values to achieve quiet switching with minimal switching loss. The Power MOS 8™ series of devices are inherently quiet switching, stable when connected in parallel, very efficient, and lower cost than previous generations. Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds. Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. The result is extremely low internal chip equivalent gate resistances (EGR) that are up to an order of magnitude lower than competitive devices which enables uniform high speed switching across the entire chip. Body Diode Options MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a MOSFET with a faster recovery intrinsic body diode. This results in improved reliability in ZVS circuits due to shorter minority carrier lifetime and increased commutation dv/dt ruggedness. If a fast recovery body diode is not needed, MOSFET versions are available.