Discrete Semiconductor Products

SQ3427AEEV-T1_GE3

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Vishay General Semiconductor - Diodes Division

MOSFET P-CH 60V 5.3A 6TSOP

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Discrete Semiconductor Products

SQ3427AEEV-T1_GE3

Active

Vishay General Semiconductor - Diodes Division

MOSFET P-CH 60V 5.3A 6TSOP

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SQ3427AEEV-T1_GE3

Current - Continuous Drain (Id) @ 25°C	5.3 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	95 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

SQ3427 Series

Part	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SQ3427AEEV-T1_GE3	MOSFET (Metal Oxide)	5 W	5.3 A	10 V	2.5 V	6-TSOP	P-Channel	20 V	1000 pF	SOT-23-6 Thin TSOT-23-6	Surface Mount	22 nC	Automotive	AEC-Q101	-55 °C	175 ░C	60 V	95 mOhm
Vishay General Semiconductor - Diodes Division SQ3427EV-T1_BE3	MOSFET (Metal Oxide)	5 W	5.3 A	4.5 V 10 V	2.5 V	6-TSOP	P-Channel	20 V	1000 pF	SOT-23-6 Thin TSOT-23-6	Surface Mount	22 nC	Automotive	AEC-Q101	-55 °C	175 ░C	60 V	95 mOhm
Vishay General Semiconductor - Diodes Division SQ3427AEEV-T1_BE3	MOSFET (Metal Oxide)	5 W	5.3 A	4.5 V 10 V	2.5 V	6-TSOP	P-Channel	20 V	1000 pF	SOT-23-6 Thin TSOT-23-6	Surface Mount	22 nC	Automotive	AEC-Q101	-55 °C	175 ░C	60 V	95 mOhm
Vishay General Semiconductor - Diodes Division SQ3427EEV-T1-GE3	MOSFET (Metal Oxide)	5 W	5.5 A	4.5 V 10 V	2.5 V	6-TSOP	P-Channel	20 V		SOT-23-6 Thin TSOT-23-6	Surface Mount				-55 °C	175 ░C	60 V	82 mOhm	32 nC	1125 pF
Vishay General Semiconductor - Diodes Division SQ3427EV-T1_GE3	MOSFET (Metal Oxide)	5 W	5.3 A	4.5 V 10 V	2.5 V	6-TSOP	P-Channel	20 V	1000 pF	SOT-23-6 Thin TSOT-23-6	Surface Mount	22 nC	Automotive	AEC-Q101	-55 °C	175 ░C	60 V	95 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.75
		10	$ 0.65
		100	$ 0.45
		500	$ 0.38
		1000	$ 0.32
	Digi-Reel®	1	$ 0.75
		10	$ 0.65
		100	$ 0.45
		500	$ 0.38
		1000	$ 0.32
	Tape & Reel (TR)	3000	$ 0.28
		6000	$ 0.27
		9000	$ 0.25
		30000	$ 0.25

Description

General part information

SQ3427 Series

P-Channel 60 V 5.3A (Tc) 5W (Tc) Surface Mount 6-TSOP

Documents

Technical documentation and resources