SQ3427 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

MOSFET P-CH 60V 5.3A 6TSOP

Part	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SQ3427AEEV-T1_GE3	MOSFET (Metal Oxide)	5 W	5.3 A	10 V	2.5 V	6-TSOP	P-Channel	20 V	1000 pF	SOT-23-6 Thin TSOT-23-6	Surface Mount	22 nC	Automotive	AEC-Q101	-55 °C	175 ░C	60 V	95 mOhm
Vishay General Semiconductor - Diodes Division SQ3427EV-T1_BE3	MOSFET (Metal Oxide)	5 W	5.3 A	4.5 V 10 V	2.5 V	6-TSOP	P-Channel	20 V	1000 pF	SOT-23-6 Thin TSOT-23-6	Surface Mount	22 nC	Automotive	AEC-Q101	-55 °C	175 ░C	60 V	95 mOhm
Vishay General Semiconductor - Diodes Division SQ3427AEEV-T1_BE3	MOSFET (Metal Oxide)	5 W	5.3 A	4.5 V 10 V	2.5 V	6-TSOP	P-Channel	20 V	1000 pF	SOT-23-6 Thin TSOT-23-6	Surface Mount	22 nC	Automotive	AEC-Q101	-55 °C	175 ░C	60 V	95 mOhm
Vishay General Semiconductor - Diodes Division SQ3427EEV-T1-GE3	MOSFET (Metal Oxide)	5 W	5.5 A	4.5 V 10 V	2.5 V	6-TSOP	P-Channel	20 V		SOT-23-6 Thin TSOT-23-6	Surface Mount				-55 °C	175 ░C	60 V	82 mOhm	32 nC	1125 pF
Vishay General Semiconductor - Diodes Division SQ3427EV-T1_GE3	MOSFET (Metal Oxide)	5 W	5.3 A	4.5 V 10 V	2.5 V	6-TSOP	P-Channel	20 V	1000 pF	SOT-23-6 Thin TSOT-23-6	Surface Mount	22 nC	Automotive	AEC-Q101	-55 °C	175 ░C	60 V	95 mOhm