Discrete Semiconductor Products

SQ3427EEV-T1-GE3

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET P-CH 60V 5.5A 6TSOP

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Discrete Semiconductor Products

SQ3427EEV-T1-GE3

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET P-CH 60V 5.5A 6TSOP

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SQ3427EEV-T1-GE3

Current - Continuous Drain (Id) @ 25°C	5.5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1125 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	5 W
Rds On (Max) @ Id, Vgs	82 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

SQ3427 Series

Part	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SQ3427AEEV-T1_GE3	MOSFET (Metal Oxide)	5 W	5.3 A	10 V	2.5 V	6-TSOP	P-Channel	20 V	1000 pF	SOT-23-6 Thin TSOT-23-6	Surface Mount	22 nC	Automotive	AEC-Q101	-55 °C	175 ░C	60 V	95 mOhm
Vishay General Semiconductor - Diodes Division SQ3427EV-T1_BE3	MOSFET (Metal Oxide)	5 W	5.3 A	4.5 V 10 V	2.5 V	6-TSOP	P-Channel	20 V	1000 pF	SOT-23-6 Thin TSOT-23-6	Surface Mount	22 nC	Automotive	AEC-Q101	-55 °C	175 ░C	60 V	95 mOhm
Vishay General Semiconductor - Diodes Division SQ3427AEEV-T1_BE3	MOSFET (Metal Oxide)	5 W	5.3 A	4.5 V 10 V	2.5 V	6-TSOP	P-Channel	20 V	1000 pF	SOT-23-6 Thin TSOT-23-6	Surface Mount	22 nC	Automotive	AEC-Q101	-55 °C	175 ░C	60 V	95 mOhm
Vishay General Semiconductor - Diodes Division SQ3427EEV-T1-GE3	MOSFET (Metal Oxide)	5 W	5.5 A	4.5 V 10 V	2.5 V	6-TSOP	P-Channel	20 V		SOT-23-6 Thin TSOT-23-6	Surface Mount				-55 °C	175 ░C	60 V	82 mOhm	32 nC	1125 pF
Vishay General Semiconductor - Diodes Division SQ3427EV-T1_GE3	MOSFET (Metal Oxide)	5 W	5.3 A	4.5 V 10 V	2.5 V	6-TSOP	P-Channel	20 V	1000 pF	SOT-23-6 Thin TSOT-23-6	Surface Mount	22 nC	Automotive	AEC-Q101	-55 °C	175 ░C	60 V	95 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

SQ3427 Series

P-Channel 60 V 5.5A (Tc) 5W (Tc) Surface Mount 6-TSOP

Documents

Technical documentation and resources

No documents available