IKZA75N65SS5XKSA1
ActiveTHE IKZA75N65SS5 IS A 650 V, 75 A TRENCHSTOP™ 5 S5 HYBRID COOLSIC™ IGBT DISCRETE
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IKZA75N65SS5XKSA1
ActiveTHE IKZA75N65SS5 IS A 650 V, 75 A TRENCHSTOP™ 5 S5 HYBRID COOLSIC™ IGBT DISCRETE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IKZA75N65SS5XKSA1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Current - Collector Pulsed (Icm) | 300 A |
| Gate Charge | 164 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-247-4 |
| Power - Max [Max] | 395 W |
| Supplier Device Package | PG-TO247-4-3 |
| Switching Energy | 240 µJ, 750 µJ |
| Td (on/off) @ 25°C [Max] | 145 ns |
| Td (on/off) @ 25°C [Min] | 22 ns |
| Vce(on) (Max) @ Vge, Ic [Max] | 1.7 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IKZA75 Series
650 V, 75A TRENCHSTOP™ 5 S5 IGBT co-packed with full-rated 6th generation Silicon Carbide CoolSiC™ Schottky barrier diode in Kelvin-emitter TO-247-4 package. The 650 V hard-switchingTRENCHSTOP™ 5 S5IGBT technology addresses applications switching between 10 kHz and 40 kHz and due to high controllability and smooth switching behavior delivers not only high efficiency, but is easy to design-in. Combination of theTRENCHSTOP™ 5 S5IGBT technology with thefreewheeling SiC Schottky barrier diodesinCoolSiC™ Hybrid discretefurther reduces switching losses at almost unchanged dv/dt and di/dt values. The Kelvin emitter TO-247 4pin package provides ultra-low inductance to the gate-emitter control loop further improving switching performance especially at high switching frequencies.
Documents
Technical documentation and resources
