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Infineon Technologies AG-IKZA75N65EH7XKSA1 IGBT Chip Trans IGBT Chip N-CH 650V 80A 338W 4-Pin(4+Tab) TO-247 Tube
Discrete Semiconductor Products

IKZA75N65EH7XKSA1

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INFINEON

HARD-SWITCHING 650 V, 75 A TRENCHSTOP™ IGBT7 H7 DISCRETE WITH ANTI-PARALLEL DIODE IN TO247-4 PACKAGE TECHNOLOGY

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Infineon Technologies AG-IKZA75N65EH7XKSA1 IGBT Chip Trans IGBT Chip N-CH 650V 80A 338W 4-Pin(4+Tab) TO-247 Tube
Discrete Semiconductor Products

IKZA75N65EH7XKSA1

Active
INFINEON

HARD-SWITCHING 650 V, 75 A TRENCHSTOP™ IGBT7 H7 DISCRETE WITH ANTI-PARALLEL DIODE IN TO247-4 PACKAGE TECHNOLOGY

Technical Specifications

Parameters and characteristics for this part

SpecificationIKZA75N65EH7XKSA1
Current - Collector (Ic) (Max) [Max]80 A
Current - Collector Pulsed (Icm)300 A
Gate Charge152 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 °C
Package / CaseTO-247-4
Power - Max [Max]338 W
Reverse Recovery Time (trr)56 ns
Supplier Device PackagePG-TO247-4-3
Switching Energy750 µJ, 840 µJ
Td (on/off) @ 25°C199 ns, 26 ns
Test Condition10 Ohm, 400 V, 75 A, 15 V
Vce(on) (Max) @ Vge, Ic [Max]1.65 V
Voltage - Collector Emitter Breakdown (Max) [Max]650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 4.53
10$ 4.49
25$ 4.10
DigikeyN/A 166$ 7.29
Tube 1$ 8.36
10$ 7.17
240$ 5.62
720$ 5.27
1200$ 4.74
2160$ 4.44
NewarkEach 1$ 11.71
10$ 10.41
25$ 9.11
50$ 7.82
100$ 7.39
480$ 6.95

Description

General part information

IKZA75 Series

Hard-switching 650 V, 75 ATRENCHSTOP™ IGBT7H7discretein TO247-4 package technology has been developed to fulfill the demand in green & efficient energy applications, while also offering significant improvements over its predecessor generations.