Discrete Semiconductor Products

IKZA75N65RH5XKSA1

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INFINEON

THE IKZA75N65RH5 IS A 650 V, 75 A TRENCHSTOP™ 5 H5 HYBRID COOLSIC™ IGBT DISCRETE

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DocumentsTechnical Data Sheet EN Datasheet

Discrete Semiconductor Products

IKZA75N65RH5XKSA1

Active

INFINEON

THE IKZA75N65RH5 IS A 650 V, 75 A TRENCHSTOP™ 5 H5 HYBRID COOLSIC™ IGBT DISCRETE

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IKZA75N65RH5XKSA1

Current - Collector (Ic) (Max) [Max]	80 A
Current - Collector Pulsed (Icm)	300 A
Gate Charge	168 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-4
Power - Max [Max]	395 W
Supplier Device Package	PG-TO247-4-3
Switching Energy	310 µJ, 300 µJ
Td (on/off) @ 25°C	25 ns, 180 ns
Test Condition	15 V, 9 Ohm, 400 V, 37.5 A
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

IKZA75 Series

Part	Current - Collector Pulsed (Icm)	Gate Charge	Mounting Type	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C	Switching Energy	Package / Case	IGBT Type	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Test Condition	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C [Min]	Td (on/off) @ 25°C [Max]	Vce(on) (Max) @ Vge, Ic [Max]	Reverse Recovery Time (trr)	Td (on/off) @ 25°C
INFINEON IKZA75N65RH5XKSA1	300 A	168 nC	Through Hole	80 A	25 ns 180 ns	300 µJ 310 µJ	TO-247-4	Trench Field Stop	175 °C	-40 °C	395 W	PG-TO247-4-3	2.1 V	9 Ohm 15 V 37.5 A 400 V	650 V
INFINEON IKZA75N65SS5XKSA1	300 A	164 nC	Through Hole	80 A		240 µJ 750 µJ	TO-247-4	Trench Field Stop	175 °C	-40 °C	395 W	PG-TO247-4-3			650 V	22 ns	145 ns	1.7 V
INFINEON IKZA75N65EH7XKSA1	300 A	152 nC	Through Hole	80 A		750 µJ 840 µJ	TO-247-4	Trench Field Stop	175 °C	-40 °C	338 W	PG-TO247-4-3		10 Ohm 15 V 75 A 400 V	650 V			1.65 V	56 ns	26 ns 199 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	49	$ 9.82
	Tube	1	$ 10.69
		30	$ 6.36
		120	$ 5.40
		510	$ 4.98
Newark	Each	1	$ 10.19
		10	$ 10.16
		25	$ 8.24
		50	$ 7.92
		100	$ 7.60
		480	$ 7.59

Description

General part information

IKZA75 Series

650 V, 75 A TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation Silicon CarbideCoolSiC™ Schottky barrier diode in Kelvin-emitter TO-247-4 package. The ultra-fast 650 V hard-switchingTRENCHSTOP™ 5 H5IGBT benefits very low switching losses at switching speed above 30 kHz. Combination of ultra-fastTRENCHSTOP™ 5 H5IGBT with half-ratedfreewheeling SiC Schottky barrier diodesinCoolSiC™ Hybrid discreteenables unprecedented reduction of total switching losses and allows to increase significantly switching frequency. The Kelvin emitter TO-247 4pin package provides ultra-low inductance to the gate-emitter control loop further improving switching performance especially at high switching frequencies.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet