Specification	BUK9Y8R7-60E,115

Current - Continuous Drain (Id) @ 25°C	86 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	31 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	4570 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max) [Max]	147 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	7.5 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2.1 V

BUK9Y8 Series

N-channel 60 V, 8.7 mΩ logic level MOSFET in LFPAK56

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Mounting Type	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Qualification	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]
Nexperia USA Inc. BUK9Y8R7-60E,115	10 V	7.5 mOhm	5 V 10 V	147 W	2.1 V	MOSFET (Metal Oxide)	175 °C	-55 °C	LFPAK56 Power-SO8	Surface Mount	Automotive	31 nC	4570 pF	SC-100 SOT-669	AEC-Q101	60 V	86 A	N-Channel
Nexperia USA Inc. BUK9Y8R5-80EX	10 V	8 mOhm	5 V		2.1 V	MOSFET (Metal Oxide)	175 °C	-55 °C	LFPAK56 Power-SO8	Surface Mount	Automotive	54.7 nC		SC-100 SOT-669	AEC-Q101	80 V	100 A	N-Channel	8167 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.27
		10	$ 1.03
		100	$ 0.81
		500	$ 0.68
	Digi-Reel®	1	$ 1.27
		10	$ 1.03
		100	$ 0.81
		500	$ 0.68
	N/A	988	$ 2.37
	Tape & Reel (TR)	1500	$ 0.56
		3000	$ 0.52
		7500	$ 0.50
		10500	$ 0.49

Description

General part information

BUK9Y8 Series

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.