N-channel 60 V, 8.7 mΩ logic level MOSFET in LFPAK56
N-channel 60 V, 8.7 mΩ logic level MOSFET in LFPAK56
| Part | Vgs (Max) | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Mounting Type | Grade | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Qualification | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 10 V | 7.5 mOhm | 5 V 10 V | 147 W | 2.1 V | MOSFET (Metal Oxide) | 175 °C | -55 °C | LFPAK56 Power-SO8 | Surface Mount | Automotive | 31 nC | 4570 pF | SC-100 SOT-669 | AEC-Q101 | 60 V | 86 A | N-Channel | |
Nexperia USA Inc. | 10 V | 8 mOhm | 5 V | 2.1 V | MOSFET (Metal Oxide) | 175 °C | -55 °C | LFPAK56 Power-SO8 | Surface Mount | Automotive | 54.7 nC | SC-100 SOT-669 | AEC-Q101 | 80 V | 100 A | N-Channel | 8167 pF |