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LFPAK56/POWER-SO8/SOT669
Discrete Semiconductor Products

BUK9Y8R5-80EX

Active
Nexperia USA Inc.

N-CHANNEL 80 V, 8.5 MΩ LOGIC LEVEL MOSFET IN LFPAK56

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LFPAK56/POWER-SO8/SOT669
Discrete Semiconductor Products

BUK9Y8R5-80EX

Active
Nexperia USA Inc.

N-CHANNEL 80 V, 8.5 MΩ LOGIC LEVEL MOSFET IN LFPAK56

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBUK9Y8R5-80EX
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]54.7 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]8167 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-100, SOT-669
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs8 mOhm
Supplier Device PackagePower-SO8, LFPAK56
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max) @ Id2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.79
10$ 1.48
100$ 1.18
500$ 1.00
Digi-Reel® 1$ 1.79
10$ 1.48
100$ 1.18
500$ 1.00
N/A 962$ 3.31
Tape & Reel (TR) 1500$ 0.85
3000$ 0.81
7500$ 0.78
10500$ 0.77

Description

General part information

BUK9Y8 Series

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.