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Discrete Semiconductor Products

JANTXV2N3767P

Active
Microchip Technology

80V 4A NPN PIN-D TEST POWER BJT THT TO-66 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

JANTXV2N3767P

Active
Microchip Technology

80V 4A NPN PIN-D TEST POWER BJT THT TO-66 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV2N3767P
Current - Collector (Ic) (Max) [Max]4 A
Current - Collector Cutoff (Max) [Max]500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
Mounting TypeThrough Hole
Operating Temperature [Max]200 °C
Operating Temperature [Min]-65 ░C
Package / CaseTO-66-2, TO-213AA
Power - Max [Max]25 W
Supplier Device PackageTO-66 (TO-213AA)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 169.00
Microchip DirectN/A 1$ 182.00
NewarkEach 100$ 169.00
500$ 162.50

Description

General part information

JANTXV2N3767P-Transistor-PIND Series

This specification covers the performance requirements for NPN silicon, power, 2N3766 and 2N3767 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/518. The device package outline is a TO-213AA.

Documents

Technical documentation and resources