Discrete Semiconductor Products

BDX53C

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PTD HIGH VOLTAGE ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

PTD HIGH VOLTAGE ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	BDX53C

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	750
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	60 W
Supplier Device Package	TO-220
Vce Saturation (Max) @ Ib, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

NPN power Darlington transistor

Part	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Supplier Device Package
STMicroelectronics BDX53C	TO-220-3	750	Through Hole	8 A	60 W	100 V	2 V	500 çA	150 °C	TO-220
STMicroelectronics BDX53B	TO-220-3	750	Through Hole	8 A	60 W	80 V	2 V	500 çA	150 °C	TO-220
STMicroelectronics BDX53BFP	TO-220-3 Full Pack	750	Through Hole	8 A	29 W	80 V	2 V	500 çA	150 °C	TO-220FP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The devices are manufactured in planar base island technology with monolithic Darlington configuration.

Technical documentation and resources